Products

Cascadable Amplifiers

M/A-COM San Jose offers an extensive line of RF and Microwave amplifiers spanning the frequency range of 10 kHz to 6 GHz.


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State-of-the-Art Manufacturing
Each M/A-COM amplifier is designed to be unconditionally stable and have excellent cascadability. Amplifiers are designed with the latest design and manufacturing techniques available in the industry. A predominantly hybrid approach using thin-film technology is used throughout the product line to obtain the highest levels of electrical performance, repeatability, reliability, and cost-effectiveness. Emphasis has been placed on using the latest in silicon bipolar, P-HEMT and GaAs FET devices available in the industry to obtain the highest electrical performance, dc efficiencies, and lowest production costs. The units are designed for maximum ease of cascading in a 50-ohm system. Most of these units are designed for +15 or +5 volt supply voltage, while some may operate at +12 or +3 volts.

Excellent Electrical Performance

Each of these thin-film cascadable amplifiers is a complete amplifier in itself, including stable dc biasing circuitry and internal power supply decoupling. The internal dc biasing circuitry allows M/A-COM amplifiers to maintain excellent electrical performance over -55蚓 to +100蚓. It is very important to provide a good RF ground plane to ensure the necessary electrical performance; in addition, it is recommended that an external 0.1 湩 dc bypass capacitor be added on the bias line.

Thin-Film Expertise

The construction of M/A-COM Microwave's amplifier series involves the highest levels of thin-film technology. Thin-film metalization is performed using a high-vacuum RF sputtering and plating system for both resistor and conductor metalizations. Thin-film circuitry offers very precise control of resistor and circuit patterns. All conductor traces are gold metalized. Thin-film resistors are formed from tantalum nitride and are passivated at high temperature to yield excellent long-term stability. The resistor composition results in less than a 150 PPM/蚓 change in resistor value over the full operating temperature range. RF transistors are bonded to the substrate using a gold-silicon, gold-germanium, or gold-tin eutectic-die attach process. This process results in superior adhesion of the transistors, minimal paracitics and excellent heat transfer.